Compact Quantum Mechanical Device Models for MOSFETs in Gigasc

In this paper, quantum mechanical effects on nanoscale MOSFET devices are investigated through compact physical models. These models cover quantum mechanical influences on device parameters including long-channel threshold voltage shift, gate capacitance degradation, deteriorated short channel effects and sub-threshold slope. In-depth understanding of device characteristic modification brought by quantum mechanical effects is given. The predictions from the newly developed models agree well with both numerical simulations and measurements. It is indicated from the results that the quantum mechanical effects have strong impact on the MOSFET performance and can not be ignored.